Diffusive Semiconductor Moment Equations Using Fermi-Dirac Statistics

On the Diffusion limit of a semiconductor Boltzmann-Poisson system without micro-reversible process

This paper deals with the diffusion approximation of a semiconductor BoltzmannPoisson system. The statistics of collisions we are considering here, is the Fermi-Dirac operator with the Pauli exclusion term and without the detailed balance principle. Our study generalizes, the result of Goudon and Mellet [14], to the multi-dimensional case. keywords: Semiconductor, Boltzmann-Poisson, diffusion a...

Uniform convergence for moment problems with Fermi-Dirac type entropies

We consider the best entropic estimation to a unknown density x, given some of its algebraic or trigonometric moments. A uniform convergence theorem is established in this paper for such problems using Fermi-Dirac type entropic objectives .

A Hierarchy of Diffusive Higher-Order Moment Equations for Semiconductors

A hierarchy of diffusive partial differential equations is derived by a moment method and a Chapman-Enskog expansion from the semiconductor Boltzmann equation assuming dominant collisions. The moment equations are closed by employing the entropy maximization principle of Levermore. The new hierarchy contains the well-known drift-diffusion model, the energy-transport equations, and the six-momen...

Two-Dimensional Numerical Simulation of Fermi- Level Pinning Phenomena Due to DX Centers in AlGaAs/GaAs HEMT’s

Fermi-level pinning phenomena due to DX centers in AlGaAs/GaAs HEMT’s are analyzed using two-dimensional numerical simulation based on a drift-diffusion model. A DX center model is introduced assuming Fermi-Dirac statistics for ionized donor density with the aluminum mole fraction dependence of the deep-donor energy level. The calculated results reveal that the decrease in transconductance of A...

Numerical modeling of highly doped Si:P emitters based on Fermi–Dirac statistics and self-consistent material parameters